The invention relates to a novel pixel structure for an infrared image sensor, which comprises the steps of: photolithographic positioning of an active area; The insulation isolation slot STI at the shallow channel is formed; N well and P well formation; Grid formation; Shallow doped drain LDD formation; Grid sidewall formation; Formation of the source region and drain region of the new pixel structure; Metal wiring and passivation layer covering. The invention uses graphene as a photosensitive material. Because of the hot electron scattering and multiplication in graphene and its zero band gap energy band structure, the photosensitive material made of graphene can respond photoelectrically and can respond to very wide wavelengths; The invention optimizes the existing infrared image sensor with low cost and simplified process, so that the response wavelength of the silicon CMOS image sensor can be extended to farther in the near infrared, and the response wavelength can be electrically adjusted.
