The invention relates to a photosensitive material detector and a pixel structure for a flexible infrared image sensor, comprising an infrared photosensitive material structure, an insulating layer and a flexible substrate; Wherein, the insulating layer is arranged above the flexible substrate; An infrared photosensitive material structure is arranged above the insulating layer; The infrared photosensitive material structure is Schottky heterostructure; The Schottky heterostructure is formed by hexagonal boron nitride, angular graphene and two-dimensional material structure; The hexagonal boron nitride, angular graphene and two-dimensional material structure are all connected with the electrode. The beneficial effect of the invention is that the invention introduces angular graphene into the pixel structure. Since angular graphene contains zero band gap and the work function of angular graphene can be adjusted by voltage, the pixel structure can respond to a very wide wavelength range and can achieve selectivity to the response wavelength.
