Experimental study of hot carrier relaxation process in the base regions of 2D-material hot electron transistors

Experimental study of hot carrier relaxation process in the base regions of 2D-material hot electron transistors

Experimental study of hot carrier relaxation process in the base regions of 2D-material hot electron transistors

Jan 2017 to Dec 2020

National Natural Science Foundation of China

Funding amount: 600000 yuan